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HCTS374T
Data Sheet July 1999 File Number
4627.1
Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered
Intersil's Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability. The Intersil HCTS374T is a Radiation Hardened NonInverting Octal D-type, Positive Edge Triggered Flip-Flop with three-state outputs. The eight flip-flops enter data into their registers on the LOW-to-HIGH transition of the clock (CP). Data is also transferred to the outputs during this transition. The output enable (OE) controls the three-state outputs and is independent of the register operation. When the output enable is high, the outputs are in the high impedance state.
Features
* QML Class T, Per MIL-PRF-38535 * Radiation Performance - Gamma Dose () 1 x 105 RAD(Si) - Latch-Up Free Under Any Conditions - SEP Effective LET No Upsets: >100 MEV-cm2/mg - Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) * 3 Micron Radiation Hardened SOS CMOS * Fanout (Over Temperature Range) - Bus Driver Outputs - 15 LSTTL Loads * Significant Power Reduction Compared to LSTTL ICs * DC Operating Voltage Range: 4.5V to 5.5V * LSTTL Input Compatibility - VIL = 0.8V Max - VIH = VCC/2 Min * Input Current Levels Ii 5mA at VOL, VOH
Specifications
Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the HCTS374T are contained in SMD 5962-95748. A "hot-link" is provided from our website for downloading. www.intersil.com/spacedefense/newsafclasst.asp Intersil's Quality Management Plan (QM Plan), listing all Class T screening operations, is also available on our website. www.intersil.com/quality/manuals.asp
Pinouts
HCTS374T (SBDIP), CDIP2-T20 TOP VIEW
OE Q0 D0 D1 Q1 Q2 D2 D3 1 2 3 4 5 6 7 8 9 20 VCC 19 Q7 18 D7 17 D6 16 Q6 15 Q5 14 D5 13 D4 12 Q4 11 CP
Ordering Information
ORDERING NUMBER 5962R9574801TRC 5962R9574801TXC PART NUMBER HCTS374DTR HCTS374KTR TEMP. RANGE (oC) -55 to 125 -55 to 125
OE Q0 D0 D1 Q1 Q2 D2 D3 Q3 GND
Q3
GND 10
HCTS374T (FLATPACK), CDFP4-F20 TOP VIEW
1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 VCC Q7 D7 D6 Q6 Q5 D5 D4 Q4 CP
NOTE: Minimum order quantity for -T is 150 units through
distribution, or 450 units direct.
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 Satellite Applications FlowTM (SAF) is a trademark of Intersil Corporation.
HCTS374T Functional Diagram
1 OF 8 (3, 4, 7, 8, 13, 14, 17, 18) D COMMON CONTROLS CP 11 FF D Q OE Q (2, 5, 6, 9, 12, 15, 16, 19)
CP
OE 1
TRUTH TABLE INPUTS OE L L L H L X CP Dn H L X X OUTPUTS Qn H L Q0 Z
H =High Level (Steady State). L =Low Level (Steady State). X =Immaterial. Z =High Impedance. = Transition from Low to High Level. Q0 =The level of Q before the indicated input conditions were established.
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HCTS374T Die Characteristics
DIE DIMENSIONS: (2743m x 2692m x 533m 51m) 108 x 106 x 21mils 2mil METALLIZATION: Type: Al Si Thickness: 11kA 1kA SUBSTRATE POTENTIAL: Unbiased (Silicon on Sapphire) BACKSIDE FINISH: Sapphire PASSIVATION: Type: Silox (SiO2) Thickness: 13kA 2.6kA WORST CASE CURRENT DENSITY: < 2.0e5 A/cm2 TRANSISTOR COUNT: 468 PROCESS: CMOS SOS
Metallization Mask Layout
HCTS374T
D0 (3) Q0 (2) OE (1) VCC (20) Q7 (19)
(18) D7
D1 (4) (17) D6 Q1 (5)
(16) Q6 Q2 (6) (15) Q5
D2 (7) (14) D5
(8) D3
(9) Q3
(10) GND
(11) CP
(12) Q4
(13) D4
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask series for the HCTS374 is TA14404A.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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